, o ne, TIP31, TIP31a, TIP31b, TIP31c, (npn), tip32, tip32a, tip32b, tip32c, (pnp) telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 complementary silicon plastic power transistors designed for use in general purpose amplifier and switching applications. features ? col lector-emitter saturation voltage- vce(sat) = 1-2 vdc (max) @ ic = 3.0 adc ? collector-emitter sustaining voltage - vceo(sus) = 40 vdc (min) - t1p31, tip32 = 60 vdc (min) - TIP31 a, t1p32a = 80 vdc (min) - TIP31b, tip32b = 100 vdc(min)-TIP31c, tip32c ? high current gain - bandwidth product ft =3.0 mhz (min) @ ic = 500 madc ? compact to-220 ab package ? pb-free packages are available* maximum ratings rating collector - emitter voltage TIP31 , tip32 TIP31a, tip32a TIP31b, tip32b TIP31c, tip32c collector-base voltage TIP31 , tip32 TIP31a, tip32a TIP31b, tip32b TIP31c, tip32c emitter-base voltage collector current continuous peak base current total power dissipation @tc = 25'c derate above 25 c total power dissipation @ta = 25c derate above 25c undamped inductive load energy (note 1 ) operating and storage junction temperature range symbol vceo vcb veb ic ib pd pd e tj. tstg value 40 60 80 100 40 60 80 100 5.0 3.0 5.0 1.0 40 0.32 2.0 0.016 32 -65to + 150 unit vdc vdc vdc adc adc w w/c w w/c mj c 3 ampere power transistors complementary silicon 40-60-80-100 volts, 40 watts marking diagram to-220ab o tipsxxg ayww maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. lc = 1.8 a, l = 20mh, p.r.f. = 10 hz, vcc = 10v, rbe = 100 q nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
TIP31, TIP31a, TIP31b, TIP31c, (npn), tip32, tip32a, tip32b, tip32c, (pnp) thermal characteristics characteristic thermal resistance, junction-to-ambient thermal resistance, junction-to- case symbol rbja rbjc max 62.5 3.125 unit c/w c/w electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min max unit off characteristics collector-emitter sustaining voltage (note 2) TIP31 , tip32 (lc = 30 madc, ib = 0) TIP31a, tip32a TIP31b, tip32b TIP31c, tip32c collector cutoff current (vce = 30 vdc, ib = 0) TIP31, tip32, TIP31a, tip32a (vce = 60 vdc, ib = 0) TIP31 b, TIP31c, tip32b, tip32c collector cutoff current (vce = 40 vdc, veb = 0) TIP31, tip32 (vce = 60 vdc, veb = 0) TIP31a, tip32a (vce = 80 vdc, veb = 0) TIP31 b, tip32b (vce = 100 vdc, veb = 0) TIP31c, tip32c emitter cutoff current (vbe = 5.0 vdc, iq = 0) vceo(sus) iceo !ces 'ebo 40 60 80 100 ~ - - - 0.3 0.3 200 200 200 200 1.0 vdc madc nadc madc on characteristics (note 2) dc current gain (lc = 1 .0 adc, vce = 4.0 vdc) (lc = 3.0 adc, vce = 4.0 vdc) collector-emitter saturation voltage (lc = 3.0 adc, ib = 375 madc) base-emitter on voltage (lc = 3.0 adc, vce = 4.0 vdc) hfe vce(sat) vbe(on) 25 10 - - 50 1.2 1.8 - vdc vdc dynamic characteristics current-gain - bandwidth product (lc = 500 madc, vce = 10 vdc, ftest = 1.0 mhz) small-signal current gain (lc = 0.5 adc, vce = 10 vdc, f = 1.0 khz) ft hfe 3.0 20 - - mhz - 2. pulse test: pulse width s 300 us, duty cycle < 2.0%.
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